2SC6078 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

r_th – t_w
100
2SC6078
10
1
0.001
0.01
Single nonrepetitive pulse Ta = 25°C
Curves should be applied in thermal limited area.
0.1
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
10
IC max. (pulsed)*
IC max. (continuous)
1 ms*
10 ms*
100 ms*
1
0.1
DC operation
Ta=25℃
0.01 ^{* Single nonrepetitive pulse}
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
VCEO MAX.
10
100
Collector−emitter voltage V_CE (V)
4
2006-11-16