2SC6078 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

2SC6078
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
I_CBO
V_CB = 160 V, I_E = 0
I_EBO
V_EB = 7 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)} V_CE = 2 V, I_C = 1 mA
h_{FE (2)} V_CE = 2 V, I_C = 0.5 A
h_{FE (3)} V_CE = 2 V, I_C = 1 A
V_{CE (sat) (1)} I_C = 0.5 A, I_B = 50 mA
V_{CE (sat) (2)} I_C = 1 A, I_B = 100 mA
V_{BE (sat)} I_C = 1 A, I_B = 100 mA
f_T
V_CE = 2 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0,f = 1MH_Z
t_r
20 μs
Input ^IB1
Output
I_B2
t_stg
V_CC = 24 V
t_f
I_B1 = −I_B2 = 100 mA
Duty cycle ≦1%
Min Typ. Max Unit
－
－
1.0
uA
－
－
1.0
uA
80
－
－
V
80
－
－
100
－
200
60
－
－
－
－
0.3
V
－
－
0.5
V
－
－
1.5
V
－
150
－ MHZ
－
14
－
pF
－ 0.05 －
－
0.4
－
us
－ 0.15 －
Marking
C6078
Part No.
Lot code
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16