2SC6078 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

3
500 300
I_C – V_CE
200
2
100
50
20
10
1
IB = 5 mA
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
2SC6078
I_C – V_BE
3 _{Common emitter}
VCE = 2 V
Single nonrepetitive pulse
2
Ta = 100℃
25
1
− 55
0
0
0.5
1
1.5
2
Base-emitter voltage V_BE (V)
1000
100
h_FE – I_C
Ta = 100°C
−55
25
10
1
0.001
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.01
0.1
1
10
Collector current I_C (A)
V_{CE (sat)} – I_C
10
Common emitter
IC/IB = 10
Single nonrepetitive pulse
1
Ta = 100°C
0.1
−55
25
0.01
0.001
0.01
0.1
1
10
Collector current I_C (A)
f_T – I_C
1000
100
10
5
10
VCE = 2V
Common emitter
Ta = 25°C
Single nonrepetitive pulse
1
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 10
Single nonrepetitive pulse
1
−55
25
Ta = 100°C
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
3
2006-11-16