2SC6078 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6078
○ Power Amplifier Applications
○ Power Switching Applications
2SC6078
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = 0.5 V (max)（I_C = 1A）
• High-speed switching: t_stg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
160
V
160
V
80
V
7
V
3
A
5
A
1.0
A
1.8
W
150
°C
−55～150
°C
1 : BASE
2 : COLLECTOR（HEAT SINK）
3 : EMITTER
JEDEC
－
JEITA
－
TOSHIBA
2-10T1A
Note: Using continuously under heavy loads (e.g. the application of
Weight:1.5g(typ)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-16