2SC6076 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

r_th – t_w
100
2SC6076
10
1
0.001
0.01
Tc = 25°C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
0.1
1
10
100
Pulse width t_w (s)
Safe Operating Area
10
IC max. (pulsed)*
1 ms*
10 ms*
IC max. (continuous)
100 ms*
1
DC operation
Tc=25℃
0.1
0.01
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.001
0.01
0.1
1
VCEO MAX.
10
100
Collector−emitter voltage V_CE (V)
4
2006-11-16