2SC6076 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications
Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: V_{CE (sat)} = 0.5 V (max)（I_C = 1A）
High-speed switching: t_stg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
160
V
Collector-emitter voltage
V_CEX
160
V
Collector-emitter voltage
V_CEO
80
V
Emitter-base voltage
Collector current
V_EBO
9
V
DC
I_C
3
A
Pulse
I_CP
5
A
1 : BASE
2 : COLLECTOR（HEAT SINK）
3 : EMITTER
Base current
I_B
1.5
A
Collector power dissipation Tc = 25℃
P_C
10
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55～150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight:0.36g(typ)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-16