2SC6076 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

4
3
300
I_C – V_CE
200
Common emitter
Tc = 25°C
Pulse test
100
60
2
20
10
5
1
2
IB = 1 mA
0
0
1
2
3
4
5
Collector-emitter voltage V_CE (V)
2SC6076
3
Common emitter
VCE = 2 V
Pulse test
I_C – V_BE
2
Tc = 100℃
25
− 55
1
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
10000
1000
100
h_FE – I_C
Common emitter
VCE = 2 V
Pulse test
Tc = 100°C
25
−55
10
1
0.001
0.01
0.1
1
10
Collector current I_C (A)
1
Common emitter
IC/IB = 10
Pulse test
V_{CE (sat)} – I_C
Tc = 100°C
0.1
25
−55
0.01
0.001
0.001
0.01
0.1
1
10
Collector current I_C (A)
f_T – I_C
1000
100
10
5
10
VCE = 2V
Common emitter
Tc = 25°C
Pulse test
1
0.001
0.01
0.1
1
10
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 10
Pulse test
1
Tc = −55°C
100
25
0.1
0.001
0.01
0.1
1
10
Collector current I_C (A)
3
2006-11-16