2SC6076 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process)

2SC6076
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
I_CBO
V_CB = 160 V, I_E = 0
I_EBO
V_EB = 9 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)} V_CE = 2 V, I_C = 1 mA
h_{FE (2)} V_CE = 2 V, I_C = 0.5 A
h_{FE (3)} V_CE = 2 V, I_C = 1 A
V_{CE (sat) (1)} I_C = 0.5 A, I_B = 50 mA
V_{CE (sat) (2)} I_C = 1 A, I_B = 100 mA
V_{BE (sat)} I_C = 1 A, I_B = 100 mA
f_T
V_CE = 2 V, I_C = 0.5 A
C_ob
V_CB = 10 V, I_E = 0,f = 1MH_Z
t_r
20 μs
Input ^IB1
Output
I_B2
t_stg
V_CC = 24 V
t_f
I_B1 = −I_B2 = 100 mA
Duty cycle ≤ 1%
Min Typ. Max Unit
―
―
1.0 μA
―
―
1.0 μA
80
―
―
V
150 ―
―
180
―
450
100 ―
―
―
―
0.3
V
―
―
0.5
V
―
―
1.5
V
―
150
― MH_Z
―
14
―
pF
― 0.05 ―
―
0.4
―
μs
― 0.15 ―
Marking
Ｃ６０７６
Part No. (or abbreviation code)
Lot code
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
2
2006-11-16