2SC6010 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

2SC6010
r_th – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Ta=25℃
0.1
1
10
100
1000
Pulse width tw (s)
Safe Operating Area
10
IC max (Pulse)*
1
100 ms*
10 ms*
1 ms*
0.1
100 μs*
10 μs*
DC operation
Ta = 25°C
0.01
*:Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VCEO max
100
Collector-emitter voltage V_CE (V)
1000
5
3
1
0.5
0.3
0.1
0.1
Switching Characteristics – I_C
IC = 8IB1
2IB1 = −IB2
VCC ≈ 200 V
Pulse width = 20μs
tstg
Duty cycle
≤ 1％
Ta = 25°C
tf
0.3 0.5
1
35
10
Collector current I_C (A)
P_C – Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
4
2006-11-13