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2SC6010 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type | |||
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2SC6010
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
VCB = 600 V, IE = 0
VEB = 8 V, IC = 0
IC = 1 mA, IB = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.2 A
IC = 0.6 A, IB = 75 mA
IC = 0.6 A, IB = 75 mA
20 μs
tr
VCC â 200 V
IC
IB1
IB2
OUT-
tstg
IB21
PUT
INPUT
IB1 = 20 mA, âIB2 = 50 mA
tf
DUTY CYCLE ⤠1%
Min Typ. Max Unit
â
â
100
μA
â
â
100
μA
600 â
â
V
285 â
â
V
80
â
200
100
â
200
60
â
â
â
â
1.0
V
â
â
1.3
V
â
â
0.4
â
â
3.0
μs
â
â 0.24
Marking
C6010
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13
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