2SC6010 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6010
Unit: mm
• High speed switching: t_f = 0.24μs (max) (I_C = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
600
V
600
V
285
V
8
V
1.0
A
2.0
0.5
A
1.0
W
150
°C
−55 to 150
°C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
Weight:
―
―
2-7D101A
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13