2SC6010 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type

1.0
200
0.8
0.6
I_C – V_CE
150
100
80
60
40
20
0.4
IB = 5 mA
0.2
Common emitter
Ta=25℃
Pulse test
0
0
0.4
0.8
1.2
1.6
2
Collector-emitter voltage V_CE (V)
1000
Common emitter
VCE = 5 V
Pulse test
h_FE – I_C
Ta = 100°C
100
25
−55
10
1
0.001
0.01
0.1
1
Collector current I_C (A)
2SC6010
I_C – V_CE
2.0
Common emitter
Ta=25℃
Pulse test
1.6
40
60
80
200
150
1.2
100
0.8
20
10
0.4
IB = 5 mA
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
10
Common emitter
β= 8
Pulse test
1
0.1
0.01
0.001
Ta = 100°C
−55
25
0.01
0.1
1
Collector current I_C (A)
V_{BE (sat)} – I_C
10
Common emitter
IC/IB = 8
Pulse test
1
Ta = −55°C
100
25
0.1
0.001
0.01
0.1
1
Collector current I_C (A)
1.0
Common emitter
VCE = 5 V
Pulse test
0.8
I_C – V_BE
0.6
Ta = 100°C
0.4
−55
0.2
25
0
0
0.2
0.4
0.6 _0.
1.0
1.2
Base-emitter voltage V_BE (V)
3
2006-11-13