2SC5906 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

2SC5906
1000
500
300
100
50
30
10
5
3
1
0.001
0.01
r_th – t_w
Curves should be applied in thermal limited area.
Single no repetitive pulse Ta = 25°C
Mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
0.1
1
10
100
Pulse width t_w (s)
1000
Safe Operating Area
10
IC max (pulsed) * 10 ms* 1 ms* 100 μs*
5 _{IC max (continuous)}
10 μs*
3
100 ms*
1
10 s*
0.5
DC operation*
0.3
(Ta = 25°C)
0.1 ^{*: Single pulse}
Ta = 25°C
Note that the curves for 100 ms,
0.05
10 s and DC operation will be
different when the devices
0.03
aren’t mounted on an FR4
board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm²).
These characteristic curves
must be derated linearly with
0.01 ^{increase in temperature.}
0.1
0.3
1
3
10
30
100
Collector-emitter voltage V_CE (V)
4
2006-11-13