2SC5906 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SC5906
Unit: mm
• High DC current gain: h_FE = 200 to 500 (I_C = 0.5 A)
• Low collector-emitter saturation voltage: V_{CE (sat)} = 0.2 V (max)
• High-speed switching: t_f = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEX
50
V
Collector-emitter voltage
V_CEO
30
V
Emitter-base voltage
V_EBO
7
V
Collector current
Base current
Collector power
dissipation
DC
I_C
Pulse
I_CP
4
A
7
I_B
0.4
A
DC
0.8
t = 10 s
P_C (Note 1)
1.25
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13