2SC5906 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
Cob
t_r
t_stg
t_f
V_CB = 50 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.5 A
V_CE = 2 V, I_C = 1.6 A
I_C = 1.6 A, I_B = 53 mA
I_C = 1.6 A, I_B = 53 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
See Figure 1.
V_CC ≈ 12 V, R_L = 7.5 Ω
I_B1 = −I_B2 = 53 mA
2SC5906
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1 μA
30
⎯
⎯
V
200
⎯
500
120 ⎯
⎯
⎯
⎯
0.20
V
⎯
⎯
1.10
V
⎯
35
⎯
pF
⎯
55
⎯
⎯
310
⎯
ns
⎯
25
⎯
20 μs
I_B1
I_B1
Input
I_B2
I_B2
Duty cycle < 1%
V_CC
Output
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
W
Part No. (or abbreviation code)
P
Lot code (year)
Dot: even year
No dot: odd year
Lot code (month)
2
2006-11-13