2SC5906 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type High-Speed Switching Applications

I_C – V_CE
8
Common emitter
Ta = 25°C
20
16
6
12
10
4
8
6
2
4
IB = 2mA
0
0
1
2
3
4
5
6
Collector-emitter voltage V_CE (V)
3
Common emitter
1 ^{IC/IB = 30}
V_{CE (sat)} − I_C
0.3
0.1
0.03
Ta = −55°C
0.01
0.003
25 100
0.001
0.001 0.003 0.01 0.03 0.1 0.3 1
3
10
Collector current I_C (A)
2SC5906
30000
10000
h_FE − I_C
3000
1000
300
Ta = −55°C
25
100
100
30
Common emitter
VCE = 2 V
10
0.001 0.003 0.01 0.03 0.1 0.3 1
3 10
Collector current I_C (A)
30
Common emitter
10 ^{IC/IB = 30}
V_{BE (sat)} − I_C
3
1
Ta = −55°C
0.3
25
0.1
100
0.03
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1
3 10
Collector current I_C (A)
7
Common emitter
VCE = 2 V
6
I_C – V_BE
5
4
3
Ta = 100°C
25
2
−55
1
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
3
2006-11-13