2SC5859 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5859
r_th(j-c) – t_w
10
1
0.1
0.01
0.001
10μ
100μ
1m
Tc = 25℃ (Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
10m
100m
1
10
100
1000
Pulse width tw (s)
Safe Operating Area
100
IC max (Pulse)*
1 ms* 100 µs*
10 µs*
IC max (Continuous)*
10
10 ms*
100 ms*
DC operation
1
Tc = 25°C
0.1
*:Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VCEO max
100
1000
Collector-emitter voltage VCE (V)
P_C – Tc
250
Infinite heat sink
200
150
100
50
0
0
25
50
75
100
125
150
Case temperature Tc (°C)
Reverse Bias – Safe Operating Area
100
IC max (Pulse)
620V,46A
10
1
1700V,0.14A
0.1
0.01
Ta = 25℃
Non repeated pulse
IB2 = −3A
L = 500 μH
0.001
10
100
VCBO max
1000
10000
Collector-emitter voltage VCE (V)
4
2004-5-18