2SC5859 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
RATING
1700
750
5
23
46
11.5
210
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
h_{FE (3)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
t_stg(1)
t_f(1)
t_stg(2)
t_f(2)
V_CB = 1700 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 2 A
V_CE = 5 V, I_C = 8 A
V_CE = 5 V, I_C = 18 A
I_C = 18 A, I_B = 4.5 A
I_C = 18 A, I_B = 4.5 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 8 A , I_B1 (end) = 1 A
f_H = 32 kHz
I_CP = 7.5 A, I_B1 (end) = 1 A
f_H = 100 kHz
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Min Typ. Max UNIT
―
―
1
mA
―
― 100 µA
750 ―
―
V
20
―
55
10
―
22
―
4.5
―
8
―
―
3
V
―
1.0 1.5
V
―
2
― MHz
― 320 ―
pF
―
4
―
µs
― 0.15 ―
―
1.8
―
µs
―
0.1
―
1
2004-5-18