2SC5859 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

20
4.0
16
12
8
I_C – V_CE
3.0
3.5
2.5
2.0
1.5
1.2
0.4
IB = 0.2 A
1.0
4
0.8
0.6
Common emitter
Tc = 25℃
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
h_FE – I_C
100
Tc = 100°C
Common emitter
VCE = 5 V
25
−25
10
1
0.01
0.1
1
10
100
Collector current I_C (A)
30
Common emitter
VCE = 5 V
25
I_C – V_BE
20
15
Tc = 100°C
−25
10
25
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base−emitter voltage V_BE (V)
2
2SC5859
2004-5-18