2SC5859 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

V_CE – I_B
10
Common emitter
Tc = −25℃
8
6
10 12 14 16
Ic = 18 A
4
29
8
7
0
0
1
2
3
4
5
Base current I_B (A)
2SC5859
10
1
8
0.1
V_CE(sat) – I_C
Common emitter
Tc = −25℃
6
10
IC/IB = 4
0.01
1
10
100
Collector current I_C (A)
V_CE – I_B
10
Common emitter
Tc = 25℃
8
6
10 12 14
16
Ic = 18 A
4
9
2
8
7
0
0
1
2
3
4
5
Base current I_B (A)
V_{CE (sat)} – I_C
10
Common emitter
Tc = 25℃
6
1
10
8
0.1
IC/IB = 4
0.01
1
10
100
Collector current I_C (A)
V_CE – I_B
10
Common emitter
Tc = 100℃
8
6
10 12 14
16
Ic = 18 A
4
9
2
8
7
0
0
1
2
3
4
5
Base current I_C (A)
V_{CE (sat)} – I_C
10
Common emitter
Tc = 100℃
6
1
IC/IB = 4
10
8
0.1
0.01
1
10
100
Collector current I_C (A)
3
2004-5-18