2SC5716 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SC5716
r_{th (j-c)} – t_w
10
1
0.1
0.01
Tc = 25°C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
0.001
10 m
100 m
1m
10 m
100 m
1
10
100
1000
Pulse width t_w (s)
Safe Operating Area
100
IC max (pulsed)
IC max
10
(continuous)
1 ms* 100 ms* 10 ms*
1
DC operation
Tc = 25°C
10 ms*
100 ms*
0.1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.01
1
10
100
VCEO
max
Collector-emitter voltage V_CE (V)
1000
P_C – Tc
100
Infinite heat sink
80
60
40
20
0
0
25
50
75
100 125 150 175
Case temperature Tc (°C)
4
2001-11-27