2SC5716 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5716
2SC5716
Horizontal Deflection Output for High Resolution Display,
Color TV
· High voltage: VCBO = 1700 V
· High speed: tf (2) = 0.2 µs (typ.)
· Collector metal (fin) is fully covered with mold resin.
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Equivalent Circuit
1. Base
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
1700
V
700
V
5
V
8
A
16
4
A
55
W
150
°C
-55~150
°C
2. Collector
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
40 W (typ.) _{3. Emitter}
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) EBO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
V_F
f_T
C_ob
t_stg (1)
t_f (1)
t_stg (2)
t_f (2)
V_CB = 1700 V, I_E = 0
V_EB = 5 V, I_C = 0
I_E = 400 mA, I_B = 0
V_CE = 5 V, I_C = 1 A
V_CE = 5 V, I_C = 6 A
I_C = 6 A, I_B = 1.5 A
I_C = 6 A, I_B = 1.5 A
I_F = 6 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 6 A, I_{B1 (end)} = 1.2 A,
f_H = 15.75 kHz
I_CP = 5.5 A, I_{B1 (end)} = 1.1 A,
f_H = 31.5 kHz
1
Min Typ. Max Unit
¾
¾
1
mA
83
¾
250 mA
5
¾
¾
V
6
¾
20
¾
3.8
¾
9
¾
¾
5
V
¾
0.9
1.2
V
¾
1.3
1.8
V
¾
2
¾ MHz
¾
180
¾
pF
¾
6
8
¾
0.3
0.6
ms
3.5
5
¾
0.2 0.35
2001-11-27