2SC5716 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

I_C – V_CE
10
2.5
1.6 ^1.8
2
1.4
8
1.2
1.0
0.8
6
0.6
0.4
4
IB = 0.2
2
Common emitter
Tc = 25°C
0
0
2
4
6
8
10
Collector-emitter voltage V_CE (V)
h_FE – I_C
300
Common emitter
VCE = 5 V
100
30
Tc = 100°C
10
25
-25
3
1
0.01 0.03 0.1 0.3
1
3
10
30
Collector current I_C (A)
2SC5716
10
Common emitter
VCE = 5 V
8
I_C – V_BE
6
4
2
Tc = 100°C 25
-25
0
0
0.2
0.4
0.6
0.8
1
1.2
Base-emitter voltage V_BE (V)
10
Open base
8
I_F – V_F
6
4
2
0
0
0.4
0.8
1.2
1.6
2
Instantaneous forward voltage V_F (V)
2
2001-11-27