2SC5716 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

V_CE – I_B
10
Common emitter
Tc = -25°C
8
6
4
2
3
4
5
IC = 6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I_B (A)
2SC5716
V_{CE (sat)} – I_C
10
Common emitter
5 ^{Tc = -25°C}
3
8
6
1
4
0.5
0.3
IC/IB = 2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I_C (A)
V_CE – I_B
10
Common emitter
Tc = 25°C
8
6
4
2
34
5
IC = 6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I_B (A)
V_{CE (sat)} – I_C
10
Common emitter
5 ^{Tc = 25°C}
3
8
1
6
0.5
4
0.3
IC/IB = 2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I_C (A)
V_CE – I_B
10
Common emitter
Tc = 100°C
8
6
4
2
3
45
IC = 6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I_B (A)
V_{CE (sat)} – I_C
10
Common emitter
5 ^{Tc = 100°C}
3
8
1
64
0.5
0.3
IC/IB = 2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I_C (A)
3
2001-11-27