2SC3963_06 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications

f_T – I_C
500
Common emitter
300
Tc = 25°C
100
VCE = 10 V
50
2
5
30
10
1
35
10
30 50 100 200
Collector current I_C (mA)
2000
1500
P_C – Ta
Ta = 25°C
1000
500
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
2SC3963
Safe Operating Area
1000
IC max (pulsed)*
500
300
IC max (continuous)
100 ms*
10 ms*
1 ms*
0.5 s*
100
50
DC operation
Tc = 25°C
30
*: Single nonrepetitive pulse
10 _{Tc = 25°C}
Curves must be derated linearly with
5
increase in temperature.
VCEO
max
3
35
10
30 50 100
300
Collector-emitter voltage V_CE (V)
4
2006-11-10