2SC3963_06 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 200 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_{FE (1)}
V_CE = 10 V, I_C = 50 mA
(Note)
h_{FE (2)} V_CE = 10 V, I_C = 150 mA
V_{CE (sat)}
V_BE
f_T
C_ob
I_C = 200 mA, I_B = 20 mA
V_CE = 10 V, I_C = 5 mA
V_CE = 10 V, I_C = 50 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 100 to 200, Y: 160 to 320
Marking
2SC3963
Min Typ. Max Unit
―
―
0.1
μA
―
―
0.1
μA
100
―
320
80
―
―
―
―
1.0
V
0.55 0.65 0.75
V
50
―
― MHz
―
―
10
pF
Lot No.
C3963
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2
2006-11-10