2SC3963_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications

2SC3963
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
High-Voltage General Amplifier Applications
Color TV Class B Sound Output Applications
Unit: mm
• High voltage: V_CEO = 160 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
200
V
Collector-emitter voltage
V_CEO
160
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
200
mA
Base current
I_B
100
mA
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-8H1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.82 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10