2SC3963_06 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process) High-Voltage General Amplifier Applications

200
5.0
160
120
80
I_C – V_CE
2.0
1.0
0.8
0.6
0.4
IB = 0.2 mA
40
Common emitter
Tc = 25°C
0
0
2
4
6
8
10
12
Collector-emitter voltage V_CE (V)
V_{CE (sat)} – I_C
0.5
Common emitter
0.3 _{IC/IB = 10}
Tc = 100°C
0.1
25
0.05
0
0.02
3
10
30
100
300
Collector current I_C (mA)
2SC3963
h_FE – I_C
500
300
VCE = 10 V
5
2
100
50 Common emitter
Tc = 25°C
30
5
10
30
100
300
Collector current I_C (mA)
h_FE – I_C
500
VCE = 10 V
300
5
100
50
Common emitter
Tc = 100°C
20
5
10
30
2
100
300
Collector current I_C (mA)
h_FE – I_C
500
300
VCE = 10 V
2
5
100
50
Common emitter
Tc = 0°C
20
3
10
30
100
300
Collector current I_C (mA)
I_C – V_BE
200
Common emitter
100
VCE = 10 V
50
30
Tc = 100°C 25 0
10
5
3
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-emitter voltage V_BE (V)
3
2006-11-10