TC55NEM216ASTV55 Datasheet, PDF (3/12 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM216ASTV55,70
OPERATING MODE
MODE
Read
Write
Output Deselect
CS Standby
Standby
* = don't care
H = logic high
L = logic low
CE
CS
OE R/W LB
UB
I/O1~I/O8
L
H
L
H
L
L Output
L
H
L
H
H
L High-Z
L
H
L
H
L
H Output
L
H
*
L
L
L Input
L
H
*
L
H
L High-Z
L
H
*
L
L
H Input
L
H
H
H
L
L ^High-Z
L
H
H
H
H
L ^High-Z
L
H
H
H
L
H ^High-Z
*
L
*
*
*
* ^High-Z
H
*
*
*
*
* ^High-Z
*
*
*
*
H
H ^High-Z
I/O9~I/O16
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
POWER
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDS
I_DDS
I_DDS
MAXIMUM RATINGS
SYMBOL
RATING
V_DD
Power Supply Voltage
V_IN
Input Voltage
V_I/O
Input/Output Voltage
P_D
Power Dissipation
T_solder
Soldering Temperature (10s)
T_stg
Storage Temperature
T_opr
Operating Temperature
*: −2.0 V when measured at a pulse width of 20ns
VALUE
−0.3~7.0
−0.3*~7.0
−0.5~V_DD + 0.5
0.6
260
−55~150
−40~85
UNIT
V
V
V
W
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
MIN
V_DD
Power Supply Voltage
4.5
V_IH
Input High Voltage
2.2
V_IL
Input Low Voltage
−0.3*
V_DH
Data Retention Supply Voltage
2.0
*: −2.0V when measured at a pulse width of 20 ns
5 V ± 10%
2.7 V~5.5 V
TYP
MAX
MIN
TYP
MAX
5.0
5.5
2.7
5.0
5.5

V_DD + 0.3 V_DD − 0.2

V_DD + 0.3

0.6
−0.3*

0.2

5.5
2.0

5.5
UNIT
V
V
V
V
2002-10-30 3/12