TC55V16256JI Datasheet, PDF(2/11 Page) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TC55V16256JI Datasheet, PDF (2/11 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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BLOCK DIAGRAM

TC55V16256JI/FTI-12,-15

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

I/O16

VDD

MEMORY CELL ARRAY

GND

A13

A14

1,024 Ã 256 Ã 16

A15

(4,194,304)

A17

SENSE AMP

CLOCK

GENERATOR

COLUMN DECODER

COLUMN ADDRESS BUFFER

A2 A3 A6 A7 A10 A11 A12 A16

MAXIMUM RATINGS

SYMBOL

RATING

VDD

Power Supply Voltage

VIN

Input Terminal Voltage

VI/O

Input/Output Terminal Voltage

Power Dissipation

Tsolder

Soldering Temperature (10s)

Tstg

Storage Temperature

Topr

Operating Temperature

*: â1.5 V with a pulse width of 20%ÅtRC min (4 ns max)

**: VDD + 1.5 V with a pulse width of 20%ÅtRC min (4 ns max)

VALUE

â0.5 to 4.6

â0.5* to 4.6

â0.5* to VDD + 0.5**

1.4

260

â65 to 150

â40 to 100

UNIT

Â°C

2002-01-07 2/11

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