TC5565APL Datasheet, PDF (2/9 Pages) Toshiba Semiconductor – 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology

TC5565APL-10, TC5565APL-12, TC5565APL-15
TC5565AFL-10, TC5565AFL-12, TC5565AFL-15
OPERATION MODE
\CE1
CE2
\OE
Read
L
H
L
Write
L
H
*
Output Deselect
L
H
H
Standby
H
*
*
L
*
MAXIMUM RATINGS
SYMBOL
ITEM
V_DD
Power Supply Voltage
V_IN
Input Voltage
V_I/O
Input and Output Voltage
P_D
Power Dissipation
T_solder
Soldering Temperature
T_stg
Storage Temperature
T_opr
Operating Temperature
* -3.0V at pulse width 50ns MAX. **Flat package
R/W
1/01-T/08
POWER
H
D_OUT
I_DDO
L
D_IN
I_DDO
H
High-Z
I_DDO
*
High-Z
I_DDS
*
High-Z
I_DDS
RATING
-0.3~7.0
*-0.3~7.0
-0-5-VDD+0.5
1.0/0.6**
260-10
-55~150
0-70
UNIT
v
v
v
W
°C sec
°C
°C
D.C RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
V_DD
Power Supply Voltage
V_IH
Input High Voltage
V_IL
Input Low Voltage
V_DH
Data-Retention Supply Voltage
MIN.
4.5
2.2
-0.3
2.0
Typ.
5.0
-
-
-
MAX.
5.5
V_DD+0.3
0.8
5.5
UNIT
v
v
V
V