TH50VSF3583AASB Datasheet, PDF (14/50 Pages) Toshiba Semiconductor – TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

TH50VSF3582/3583AASB
RECOMMENDED DC OPERATING CONDITIONS (Ta = -30°~85°C)
SYMBOL
PARAMETER
V_CCs/V_CCf Power Supply Voltage
V_IH
Input High-Level Voltage
V_IL
Input Low-Level Voltage
V_DH
Data Retention Voltage for SRAM
V_LKO
Flash Low-Lock Voltage
V_ACC
High Voltage for WP/ACC
V_ID
High Voltage for RESET
(1) −2.0 V for pulse width ≤ 20 ns
MIN
2.67
2.2
−0.3⁽¹⁾
1.5
2.3
8.5
11.4
TYP.







MAX
3.3
V_CC + 0.3
V_CC × 0.2
3.3
2.5
9.5
12.6
UNIT
V
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
CONDITION
MIN
C_IN
C_OUT
Input Capacitance
Output Capacitance
V_IN = GND

V_OUT
=

GND
Note: These parameters are sampled periodically and are not tested for every device.
TYP.


MAX
15
20
UNIT
pF
pF
2001-06-08 14/50