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BQ25890_16 Datasheet, PDF (9/69 Pages) Texas Instruments – Adjustable Voltage USB On-the-Go Boost Mode
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bq25890, bq25892
SLUSC86B – MARCH 2015 – REVISED MAY 2016
Electrical Characteristics (continued)
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT > VSLEEP, TJ = –40°C to +125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VBUS/BAT POWER UP
V(VBUS_OP)
V(VBUS_UVLOZ)
V(SLEEP)
V(SLEEPZ)
V(ACOV)
VBUS operating range
VBUS for active I2C, no battery
Sleep mode falling threshold
Sleep mode rising threshold
VBUS over-voltage rising threshold
VBUS over-voltage falling threshold
3.9
14 V
3.6
V
25
65
120 mV
130
250
370 mV
14
14.6 V
13.5
14 V
VBAT(UVLOZ)
Battery for active I2C, no VBUS
VBAT(DPL)
Battery depletion falling threshold
VBAT(DPLZ)
Battery depletion rising threshold
V(VBUSMIN)
Bad adapter detection threshold
I(BADSRC)
Bad adapter detection current source
POWER-PATH MANAGEMENT
2.3
V
2.15
2.5 V
2.35
2.7 V
3.8
V
30
mA
VSYS
Typical system regulation voltage
I(SYS) = 0 A, VBAT> VSYS(MIN),
BATFET Disabled (REG09[5]=1)
VBAT+
50 mV
V
Isys = 0 A, VBAT< VSYS(MIN),
BATFET Disabled (REG09[5]=1)
VBAT +
150 mV
V
VSYS(MIN)
VSYS(MAX)
RON(RBFET)
RON(HSFET)
RON(LSFET)
V(FWD)
VBAT(GD)
VBAT(GD_HYST)
Minimum DC system voltage output
Maximum DC system voltage output
Top reverse blocking MOSFET(RBFET) on-
resistance between VBUS and PMID
Top switching MOSFET (HSFET) on-resistance
between PMID and SW
Bottom switching MOSFET (LSFET) on-
resistance between SW and GND
BATFET forward voltage in supplement mode
VBAT< VSYS(MIN), SYS_MIN = 3.5
V (REG03[3:1]=101), ISYS= 0 A
VBAT = 4.35 V, SYS_MIN = 3.5V
(REG03[3:1]=101), ISYS= 0 A
TJ = –40°C to +85°C
TJ = –40°C to +125°C
TJ = –40°C to +85°C
TJ = –40°C to +125°C
TJ = –40°C to +85°C
TJ = –40°C to +125°C
BAT discharge current 10 mA
Battery good comparator rising threshold
Battery good comparator falling threshold
VBAT rising
VBAT falling
3.50 3.65
V
4.40 4.42 V
27
27
27
27
16
16
30
3.4 3.55
100
38 mΩ
44 mΩ
39 mΩ
47 mΩ
24 mΩ
28 mΩ
mV
3.7 V
mV
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