English
Language : 

NSBMC096 Datasheet, PDF (8/20 Pages) Texas Instruments – NSBMC096 Burst Memory Controller
Functional Description (Continued)
BLOCK ADDRESS FIELD
Once configured a NSBMC096 responds to access re-
quests within the programmed block address range The
programmed value sets the starting address of the block
while the size of the block is determined by the DRAM size
control bits The block address however is constrained to
start on a boundary that is an integer multiple of the block
size For example if 1 Mbit c 1 DRAMs are used the mem-
ory block size is 8 Mbytes and must start on an 8 Mbyte
boundary
lete FIGURE 3 Configuration Register Control Fields
TL V 11805 – 6
CYCLE EXTEND
In order to maximize the choice of memory device speeds
that may be used for various system clock rates the Row
Address Strobe (RAS) period for a basic access may be
programmed for either 3 or 4 clock cycles When cleared to
o ‘‘0’’ configuration bit 20 indicates that 3 clock cycles (2 wait
states) are to be used (2-0-0-0 burst access) when set to
‘‘1’’ 4 are required (3 wait states for a basic access 3-0-1-0
for burst) Setting bit 20 to ‘‘1’’ also has the effect of in-
creasing the RAS pre-charge time by 1 clock cycle Calcula-
s tion of the number of cycles required per access type is
detailed in the NSBMC096 Application Guide
BURST WRITE DISABLE
It bit 19 of the configuration word is set to ‘‘1’’ burst write
cycles are disabled Subsequently when the NSBMC096
b detects the start of a burst write access it asserts the
BTERM signal to request that the processor terminate the
burst in progress and transfer the remaining data using a
series of simple cycles This feature is included in order to
facilitate the implementation of systems without latching
O buffers Latching buffers are required to prevent data hold
violations during burst writes If burst writes are disabled
latching buffers are no longer required
ROW ADDRESS HOLD
Bit 18 of the configuration register controls the time at which
the memory address switches from row to column address
This allows the designer to control the address hold time
relative to RAS so that the slowest memory can be used for
a range of clock speeds Setting Bit 18 yields the maximum
row address hold time clearing it shortens the row address
hold in favor of additional column address setup
INTERLEAVE DISABLE
In cost sensitive applications it is sometimes desirable for a
system to operate with a single bank of memory so as to
reduce the minimum memory required In this case the inter-
leave mode bit is programmed to ‘‘1’’ If a second bank of
memory is added this bit can be programmed to ‘‘0’’ to
enable interleave operation and peak performance In non-
interleave mode a burst access is either 2-1-1-1 with Cycle
Extend disabled or 3-2-2-2 with Extended Cycle Non-inter-
leave operation uses only leaf A signals
7