BQ24297 Datasheet, PDF (7/48 Pages) Texas Instruments – I2C Controlled 3A Single Cell USB Charger

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PIN
NAME
BAT
SYS
PGND
SW
BTST
REGN
PMID
PowerPAD
bq24296
bq24297
SLUSBP6A – SEPTEMBER 2013 – REVISED OCTOBER 2013
PIN FUNCTIONS (continued)
NO.
13,14
15,16
17,18
19,20
21
22
23
–
TYPE
P
I
P
O
P
P
O
P
DESCRIPTION
Battery connection point to the positive terminal of the battery pack. The internal BATFET is connected between BAT and
SYS. Connect a 10uF closely to the BAT pin.
System connection point. The internal BATFET is connected between BAT and SYS. When the battery falls below the
minimum system voltage, switch-mode converter keeps SYS above the minimum system voltage.
Power ground connection for high-current power converter node. Internally, PGND is connected to the source of the n-
channel LSFET. On PCB layout, connect directly to ground connection of input and output capacitors of the charger. A
single point connection is recommended between power PGND and the analog GND near the IC PGND pin.
Switching node connecting to output inductor. Internally SW is connected to the source of the n-channel HSFET and the
drain of the n-channel LSFET. Connect the 0.047µF bootstrap capacitor from SW to BTST.
PWM high side driver positive supply. Internally, the BTST is connected to the anode of the boost-strap diode. Connect
the 0.047µF bootstrap capacitor from SW to BTST.
PWM low side driver positive supply output. Internally, REGN is connected to the cathode of the boost-strap diode.
Connect a 4.7-μF (10V rating) ceramic capacitor from REGN to analog GND. The capacitor should be placed close to the
IC. REGN also serves as bias rail of TS pin.
Connected to the drain of the reverse blocking MOSFET and the drain of HSFET. Given the total input capacitance,
connect a 1-µF capacitor on VBUS to PGND, and the recommended 8.2uF or more on PMID to PGND.
Exposed pad beneath the IC for heat dissipation. Always solder PowerPAD™ to the board, and have vias on the
PowerPAD plane star-connecting to PGND and ground plane for high-current power converter.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Voltage range (with respect to GND)
VBUS (converter not switching)
PMID (converter not switching)
STAT, PG
BTST
SW
Output sink current
Junction temperature
Storage temperature
BAT, SYS (converter not switching)
SDA, SCL, INT, OTG, ILIM, REGN, TS, QON CE , D+, D–, PSEL
BTST TO SW
PGND to GND
INT, STAT, PG
VALUE
–2 V – 15 V⁽²⁾
–0.3 V – 15 V⁽²⁾
–0.3 V – 12 V
–0.3 V – 12 V
–2 V – 7 V
8V (Peak for 20ns
duration)
–0.3 V – 6 V
–0.3 V – 7 V
–0.3 V – 7 V
–0.3 V – 0.3 V
6mA
–40°C to 150°C
–65°C to 150°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted.
(2) VBUS is specified up to 16V for a maximum of 24 hours under no load conditions.
RECOMMENDED OPERATING CONDITIONS
V_IN
I_IN
I_SYS
V_BAT
I_BAT
Input voltage
Input current (VBUS)
Output current (SYS)
Battery voltage
Fast charging current
Discharging current with internal MOSFET
MIN
MAX
UNIT
3.9
6.2 ⁽¹⁾
V
3
A
3.5
A
4.4
V
3
A
5.5
A
T_A
Operating free-air temperature range
–40
85
°C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BTST or SW pins. A tight
layout minimizes switching noise.
Copyright © 2013, Texas Instruments Incorporated
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