LMH6642_16 Datasheet, PDF (6/39 Pages) Texas Instruments – LMH664x Low Power, 130 MHz, 75 mA Rail-to-Rail Output Amplifiers

LMH6642, LMH6643, LMH6644
SNOS966Q – MAY 2001 – REVISED SEPTEMBER 2014
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7.5 3V Electrical Characteristics
Unless otherwise specified, all limits ensured for V⁺ = 3V, V^− = 0V, V_CM = V_O = V⁺/2, V_ID (input differential voltage) as noted
(where applicable) and R_L = 2kΩ to V⁺/2.
PARAMETER
TEST CONDITIONS
AT
TEMPERATURE
EXTREMES
V⁺ = 3V, V^− = 0V,
V_CM = V_O = V⁺/2, V_ID
R_L = 2 kΩ to V⁺/2
UNIT
MIN
TYP
MAX
MIN ⁽¹⁾ TYP ⁽²⁾ MAX⁽¹⁾
BW
−3dB BW
BW_0.1dB 0.1dB Gain
Flatness
PBW
Full Power
Bandwidth
A_V = +1, V_OUT = 200mV_PP
A_V = +2, −1, V_OUT = 200mV_PP
A_V = +2, R_L = 150Ω to V+/2,
Rf = 402Ω, V_OUT = 200mV_PP
A_V = +1, −1dB, V_OUT = 1V_PP
80
115
46
19
40
MHz
MHz
MHz
e_n
Input-Referred f = 100kHz
Voltage Noise _{f = 1kHz}
17
nV/√Hz
48
i_n
Input-Referred f = 100kHz
Current Noise _{f = 1kHz}
0.90
pA/√Hz
3.3
THD
DG
DP
CT Rej.
T_S
SR
V_OS
TC V_OS
I_B
Total Harmonic
Distortion
Differential Gain
Differential
Phase
Cross-Talk
Rejection
Settling Time
Slew Rate ⁽³⁾
Input Offset
Voltage
Input Offset
Average Drift
Input Bias
Current
f = 5MHz, V_O = 2V_PP, A_V = −1,
R_L = 100Ω to V⁺/2
V_CM = 1V, NTSC, A_V = +2
R_L =150Ω to V⁺/2
R_L =1kΩ to V⁺/2
V_CM = 1V, NTSC, A_V = +2
R_L =150Ω to V⁺/2
R_L =1kΩ to V⁺/2
f = 5MHz, Receiver:
R_f = R_g = 510Ω, A_V = +2
V_O = 2V_PP, ±0.1%, 8pF Load,
V_S = 5V
A_V = −1, V_I = 2V_PP
For LMH6642 and LMH6644
For LMH6643
See ⁽⁴⁾
See ⁽⁵⁾
±7
±7
−3.25
−48
dBc
0.17%
0.03%
0.05
0.03
47
68
90
120
±1
±1
±5
deg
dB
ns
V/µs
±5
mV
±3.4
µV/°C
−1.50 −2.60 µA
I_OS
Input Offset
Current
1000
20
800 nA
R_IN
Common Mode
Input Resistance
3
MΩ
(1) All limits are ensured by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in V_OS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
6
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