LMH6503 Datasheet, PDF (6/33 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear Variable Gain Amplifier

LMH6503
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
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Electrical Characteristics⁽¹⁾ (continued)
Unless otherwise specified, all limits ensured for T_J = 25°C, V_S = ±5V, A_V(MAX) = 10, V_CM = 0V, R_F = 1kΩ, R_G = 174Ω, V_{IN_DIFF}
= ±0.1V, R_L = 100Ω, V_G = +1V. Boldface limits apply at the temperature extremes.
Parameter
Test Conditions
Min ⁽²⁾
Typ ⁽²⁾
Max ⁽²⁾
Units
I_S
Supply Current
R_L = Open
R_L = Open, V_S = ±2.5V
37
50
53
mA
12
20
23
Connection Diagram
Top View
V^{+ 1}
2
V_G
3
+V_IN
4
+R_G
5
-R_G
6
-V_IN
V^{- 7}
14 _V+
13
NC
12 _I-
11
GND
10
V_OUT
9
V_REF
8 _V-
Figure 3. 14-Pin SOIC AND TSSOP Packages
See Package Numbers D0014A and PW0014A
6
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