LMH6503 Datasheet, PDF (11/33 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear Variable Gain Amplifier

LMH6503
www.ti.com
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
Typical Performance Charateristics (continued)
Unless otherwise specified: V_S = ±5V, 25°C, V_G = V_{G_MAX}, V_CM = 0V, R_F = 1kΩ, R_G = 174Ω, both inputs terminated in 50Ω, R_L
= 100Ω, Typical values, results referred to device output:
Output Offset Voltage vs.V_CM (Typical Unit 3)
-100
Feed through Isolation
60
-110
-120
-40°C
85°C
-130
40
20
0
-20
A_VMAX = 10 ^{AVMAX = 100}
-140
-150
25°C
-160 ^{VS = ±5V}
V_G = V_GMAX
-170
-3 -2 -1 0
1
V_CM (V)
23
-40 AVMAX = 2
-60
-80
-100
-120
100k
1M
10M
FREQUENCY (Hz)
100M
Figure 28.
Figure 29.
Gain Flatness and Linear Phase Deviation
0.40
2.4
0.30 GAIN
-1.0V
-0.4V
2
0.20
1.6
0.10
1.2
0.00
PHASE
-0.10
1.2V
0.8
0.4
-0.20
0
1.2V
-0.30
-0.40
-1.0V
-0.4V
-0.4
-0.8
GAIN DATA NORMALIZED TO LOW
-0.50
FREQUENCY VALUE AT EACH V_G
-1.2
-0.60
-1.6
f (3 MHz/DIV)
Figure 30.
Gain Flatness Frequency vs. Gain ⁽¹⁾
100M ^±0.2dB
10M
1M
R_F = 1k:
±0.1dB
R_G = 170:
P_IN = -10dBm
100k
V_G VARIED
0 1 2 3 4 5 6 7 8 9 10
A_V (V/V)
Figure 31.
Group Delay vs. Frequency
2.80
2.70
V_G = V_GMAX
A_VMAX = 10
2.60
2.50
2.40
2.30
2.20
2.10
2.00
f (5 MHz/DIV)
Figure 32.
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
10
K Factor vs. R_G
R_F = 477:
R_F = 690:
R_F = 6.18k:
R_F = 1.3k:
100
R_G (:)
Figure 33.
1k 2k
(1) Flat Band Attenuation (Relative To Max Gain) Range Definition: Specified as the attenuation range from maximum which allows gain
flatness specified (either ±0.2dB or ±0.1dB), relative to A_VMAX gain. For example, for f<30MHz, here are the Flat Band Attenuation
ranges:±0.2dB:
10V/V down to 1V/V=20dB range±0.1dB:
10V/V down to 4.7V/V=6.5dB range
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