LMH6503 Datasheet, PDF (3/33 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear Variable Gain Amplifier

LMH6503
www.ti.com
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
Absolute Maximum Ratings⁽¹⁾⁽²⁾
ESD Tolerance:⁽³⁾
Input Current
V_IN Differential
Output Current
Supply Voltages (V⁺ - V^−)
Voltage at Input/ Output pins
Soldering Information:
Storage Temperature Range
Junction Temperature
Human Body
Machine Model
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
2KV
200V
±10mA
±(V⁺ −V^−)
120mA ⁽⁴⁾
12.6V
V⁺ +0.8V,V^− - 0.8V
235°C
260°C
−65°C to +150°C
+150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical
Characteristics tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) Human body model: 1.5kΩ in series with 100pF. Machine model: 0Ω in series with 200pF.
(4) The maximum output current (I_OUT) is determined by device power dissipation limitations or value specified, whichever is lower.
Operating Ratings⁽¹⁾
Supply Voltages (V⁺ - V^−)
Temperature Range
Thermal Resistance:
14-Pin SOIC
14-Pin TSSOP
θ_JA
138°C/W
160°C/W
θ_JC
45°C/W
51°C/W
5V to 12V
−40°C to +85°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see the Electrical
Characteristics tables.
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