LMH6503 Datasheet, PDF (20/33 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear Variable Gain Amplifier

LMH6503
SNOSA78E – OCTOBER 2003 – REVISED APRIL 2013
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MAX GAIN LIMIT
MIN GAIN LIMIT
D
C
TYPICAL GAIN
B
A
BEST FIT LINE
V_G (V)
PARAMETER:
GAIN ACCURACY (TYPICAL) = B/C (dB)
GAIN ACCURACY (+ & - LIMIT) = D/C & A/C (dB)
GAIN MATCHING (+ & - LIMIT) = D/B & A/B (dB)
Figure 62. Gain Accuracy and Gain Matching Parameters Defined
NOISE
Figure 63 describes the LMH6503's output-referred spot noise density as a function of frequency with A_VMAX =
10V/V. The plot includes all the noise contributing terms. However, with both inputs terminated in 50Ω, the input
noise contribution is minimal. At A_VMAX = 10V/V, the LMH6503 has a typical flat-band input-referred spot noise
density (e_in) of 6.6nV/√Hz. For applications with −3dB BW extending well into the flat-band region, the input RMS
voltage noise can be determined from the following single-pole model:
V_RMS = e_in * 1.57 * (-3dB BANDWIDTH)
(9)
10000
1000
MAX GAIN
A_VMAX = 10
R_F = 1k:
R_G = 180:
MID GAIN
100
MIN GAIN
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 63. Output Referred Voltage Noise vs. Frequency
20
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