BQ2970 Datasheet, PDF (6/31 Pages) Texas Instruments – Cost-Effective Voltage and Current Protection Integrated Circuit

bq2970, bq2971, bq2972, bq2973
SLUSBU9C – MARCH 2014 – REVISED MARCH 2016
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Thermal Information (continued)
THERMAL METRIC⁽¹⁾
bq297xx
DSE (WSON)
UNIT
ψ_JT
ψ_JB
R_{θJC(bottom)}
Junction-to-top characterization parameter⁽⁵⁾
Junction-to-board characterization parameter⁽⁶⁾
Junction-to-case(bottom) thermal resistance⁽⁷⁾
12 PINS
6.4
152.8
N/A
°C/W
°C/W
°C/W
(5) The junction-to-top characterization parameter, ψ_JT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining R_θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
7.5 DC Characteristics
Typical Values stated where T_A = 25°C and BAT = 3.6 V. Min/Max values stated where T_A = –40°C to 85°C, and BAT = 3 V
to 4.2 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
CURRENT CONSUMPTION
V_BAT
Device operating range
BAT – VSS
BAT – V–
1.5
8
V
1.5
28
I_NORMAL
Current consumption in NORMAL mode
I_{Power_down} Current consumption in power down mode
FET OUTPUT, DOUT and COUT
BAT = 3.8 V, V– = 0 V
BAT = V– = 1.5 V
4 5.5 µA
0.1 µA
V_OL
Charge FET low output
V_OH
Charge FET high output
V_OL
Discharge FET low output
V_OH
Discharge FET high output
PULL UP INTERNAL RESISTANCE ON V–
I_OL = 30 µA, BAT = 3.8 V
I_OH = –30 µA, BAT = 3.8 V
I_OL = 30 µA, BAT = 2 V
I_OH = –30 µA, BAT = 3.8 V
0.4 0.5 V
3.4
3.7
V
0.2 0.5 V
3.4
3.7
V
R_V–D
Resistance between V– and VBAT
CURRENT SINK ON V–
V_BAT = 1.8 V, V– = 0 V
100
300 550 kΩ
I_V–S
Current sink on V– to VSS
LOAD SHORT DETECTION ON V–
V_BAT = 3.8 V
8
24 µA
V_short
Short detection voltage
0-V BATTERY CHARGE FUNCTION
V_BAT = 3.8 V and R_PackN = 2.2 kΩ
V_BAT – 1 V
V
V_0CHG
V_0INH
0-V battery charging starter voltage
0-V battery charging inhibit voltage
0-V battery charging function allowed
1.7
0-V battery charging function disallowed
V
0.75 V
7.6 Programmable Fault Detection Thresholds
PARAMETER
CONDITION
MIN TYP MAX UNIT
V_OVP
Overcharge detection voltage
Factory Device Configuration: 3.85 V to
4.60 V in 50-mV steps
T_A = 25°C
T_A = 0°C to
60°C
–10
–20
10 mV
20 mV
V_OVP–Hys
Overcharge release hysteresis 100 mV and (VSS – V–) > OCC (min) for release, T_A =
voltage
25°C
–20
20 mV
V_UVP
V_UVP+Hys
Over-discharge detection
voltage
Over-discharge release
hysteresis voltage
Factory Device Configuration: 2.00 V to 2.80 V in 50-mV
steps, T_A = 25°C
–50
100 mV and (BAT – V–) > 1 V for release, T_A = 25°C
–50
50 mV
50 mV
V_OCD
Discharging overcurrent
detection voltage
Factory Device Configuration: 90 mV to ^{TA = 25°C}
–10
200 mV in 5-mV steps
T_A = –40°C to
85°C
–15
10 mV
15 mV
6
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