BQ24085_17 Datasheet, PDF (6/42 Pages) Texas Instruments – 750-mA Single-Chip Li-Ion and Li-Pol Charge Management IC With Thermal Regulation

bq24085, bq24086, bq24087, bq24088
SLUS784E – DECEMBER 2007 – REVISED DECEMBER 2015
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7.5 Electrical Characteristics
over recommended operating range, T_J = 0 –125°C range, See the Application and Implementation section, typical values at
T_J = 25°C (unless otherwise noted), R_TMR = 49.9 KΩ
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
POWER DOWN THRESHOLD – UNDERVOLTAGE LOCKOUT
V_UVLO
Power down threshold
INPUT POWER DETECTION⁽²⁾
V_(IN) = 0 V, increase V_(OUT): 0 → 3 V OR
V_(OUT) = 0 V, increase V_(IN): 0 → 3 V,
CE = LO ⁽¹⁾
1.5
3V
V_IN(DT)
Input power detection threshold
V_HYS(INDT)
Input power detection hysteresis
INPUT OVERVOLTAGE PROTECTION
V_(IN) detected at [V_(IN) – V_(OUT)] > V_IN(DT)
Input power not detected at
[V_(IN) – V_(OUT)] < [V_IN(DT) – V_HYS(INDT)]
130 mV
30
mV
V_(OVP)
Input overvoltage detection threshold V_(IN) increasing
bq24088
bq24085/6/7
10.2 10.5 11.7
V
6.2 6.5
7
V_HYS(OVP)
Input overvoltage hysteresis
V_(IN) decreasing
bq24088
bq24085/6/7
0.5
V
0.2
QUIESCENT CURRENT
I_CC(CHGOFF)
I_CC(CHGON)
I_BAT(DONE)
IN pin quiescent current, charger off
IN pin quiescent current, charger on
Battery leakage current after
termination into IC
Input power detected,
CE = HI
V_(IN) = 6 V
V_(IN) = 16.5 V
Input power detected, CE = LO, V_BAT = 4.5 V
Input power detected, charge terminated,
CE = LO
100 200
μA
350
4
6 mA
1
5 μA
I_BAT(CHGOFF)
Battery leakage current into IC, charger Input power detected, CE = HI OR
off
input power not detected, CE = LO
1
5 μA
TS PIN COMPARATOR
V_(TS1)
V_(TS2)
V_HYS(TS)
CE INPUT
Lower voltage temperature threshold
Upper voltage temperature threshold
Hysteresis
Hot detected at V(TS) < V_(TS1); NTC thermistor
Cold detected at V(TS) > V_(TS2); NTC thermistor
Temp OK at V(TS) > [ V_(TS1) + V_HYS(TS) ] OR
V_(TS) < [ V_(TS2) – V_HYS(TS) ]
29 30 31 %V(IN)
60 61 62 %V(IN)
2
%V(IN)
V_IL
Input (low) voltage
V_IH
Input (high) voltage
STAT1, STAT2 AND PG OUTPUTS⁽³⁾
V_(/CE)
V_(/CE)
0
1V
2
V
V_OL
Output (low) saturation voltage
THERMAL SHUTDOWN
I_out = 1 mA (sink)
200 mV
T_(SHUT)
Temperature trip
T_(SHUTHYS)
Thermal hysteresis
VOLTAGE REGULATION⁽⁴⁾
Junction temperature, temp rising
Junction temperature
155
°C
20
°C
V_O(REG)
V_O(TOL)
Output voltage
Voltage regulation accuracy
T_A = 25°C
4.20
V
–0.5%
0.5%
–1%
1%
V_(DO)
Dropout voltage, V(IN) – V(OUT)
CURRENT REGULATION⁽⁵⁾
I_(OUT) = 750 mA
600 mV
I_O(OUT)
V_(SET)
Output current range
Output current set voltage
V_(BAT) > V_(LOWV), I_O(OUT) = I_(OUT) = K_(SET) ×
V_(SET)/R_(SET)
V_(ISET) = V_(SET), V_(LOWV) < V_(BAT) ≤ V_O(REG)
50
750 mA
2.45 2.5 2.55 V
(1) Specified by design, not production tested.
(2) CE = HI or LOW, V_(IN) > 3.5 V
(3) V_(IN) ≥ V_O(REG) + V_(DO-MAX)
(4) V_(IN) ≥ V_O(REG) + V_(DO-MAX), I_(TERM) < I_(OUT) < I_O(OUT), charger enabled, no fault conditions detected.
(5) V_(IN) > V_(OUT) > V_(DO-MAX), charger enabled, no fault conditions detected.
6
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