ONET8551T_16 Datasheet, PDF (5/16 Pages) Texas Instruments – 11.3-Gbps Limiting Transimpedance Amplifier

ONET8551T
www.ti.com
SLLSEI5 – OCTOBER 2013
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions with BW0 = GND and BW1 = Open (unless otherwise noted). Typical values are at
V_CC = +3.3 V and T_A = 25°C.
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V_CC
I_VCC
I_VCC
V_IN
R_OUT
V_FILTER
A_{RSSI_IB}
Supply voltage
Supply current
Supply current
Input bias voltage
Output resistance
Photodiode bias voltage⁽²⁾
RSSI gain internal bias
RSSI internal bias output offset current (no light)
Input current I_IN < 1000
μA_P-P
Input current I_IN < 2500
μA_P-P
Single-ended to V_CC
Resistive load to GND⁽³⁾
2.80
3.3 3.63
V
28
40 ⁽¹⁾
mA
45 ⁽¹⁾
mA
0.75 0.85 0.98
V
40
50
60
Ω
2.55
3.2
V
0.49 0.51 0.54 A/A
0
0.9
2.5 μA
A_{RSSI_EB}
RSSI gain external bias
Resistive load to GND⁽³⁾
RSSI external bias output offset current (no light)
0.46
0.63 A/A
25
μA
(1) Including RSSI current
(2) Regulated voltage typically 100 mV lower than V_CC.
(3) The RSSI output is a current output, which requires a resistive load to ground (GND). The voltage gain can be adjusted for the intended
application by choosing the external resistor. However, for proper operation, ensure that the voltage at RSSI does not exceed V_CC –
0.65 V.
AC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions with BW0 = GND and BW1 = Open (unless otherwise noted). Typical values are at
V_CC = +3.3 V and T_A = 25°C.
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Z₂₁
f_{HSS, 3dB}
f_L,3dB
i_N,IN
S_US
Small signal transimpedance
Small signal bandwidth
Low frequency –3-dB
bandwidth
Input referred RMS noise
Unstressed sensitivity
electrical
Differential output; Input current i_IN = 20 µA_P-P
i_IN = 20 µA_P-P ⁽¹⁾
16 µA_P-P < i_IN < 2000 µA_P-P
10-GHz bandwidth⁽²⁾
10.3125 Gbps, PRBS31 pattern, 1310 nm,
extinction ratio > 9 dB, BER 10^-12
7500
7
10000
9
30
0.9
–20
Ω
GHz
150 kHz
1.4 μA
dBm
25 µA_P-P< i_IN < 500 µA_P-P (10.3125 Gbps, K28.5
pattern)
DJ
Deterministic jitter
500 µA_P-P < i_IN < 2500 µA_P-P (10.3125 Gbps,
K28.5 pattern)
6
15 ps_P-P
10
24
V_{OUT, D, MAX}
PSNR
Maximum differential output
voltage
Power supply noise rejection
Input current i_IN = 500 µA_P-P
F < 10 MHz⁽³⁾, supply filtering according to
SFF8431
180
300
420 mV_P-P
–15
dB
(1) The small signal bandwidth is specified over process corners, temperature, and supply voltage variation. The assumed photodiode
capacitance is 0.2 pF and the bond-wire inductance is 0.3 nH. The small signal bandwidth strongly depends on environmental parasitics.
Careful attention to layout parasitics and external components is necessary to achieve optimal performance.
(2) Input referred RMS noise is (RMS output noise) divided by (gain at 100 MHz).
(3) PSNR is the differential output amplitude divided by the voltage ripple on supply. No input current at IN.
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