ONET8551T_16 Datasheet, PDF (11/16 Pages) Texas Instruments – 11.3-Gbps Limiting Transimpedance Amplifier

ONET8551T
www.ti.com
SLLSEI5 – OCTOBER 2013
Figure 8 shows an example of a layout using an external bias voltage for the photodiode in a 5-pin TO46 can.
Figure 9 shows an example with a back-side cathode contact photodiode using the internal bias voltage.
OUT+
Capacitor
OUT±
Capacitor or
ceramic
substrate
VCC
Capacitor
VAPD
Figure 8. TO46 5-Pin Layout Using the ONET8551T With an Avalanche Photodiode
OUT+
OUT±
Capacitor
VCC
Backside
Cathode
Capacitor or
ceramic
substrate
RSSI
Figure 9. TO46 5-Pin Layout Using the Internal Bias Voltage for a Back-Side Cathode Contact
Photodiode
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