ONET8551T_16 Datasheet, PDF (1/16 Pages) Texas Instruments – 11.3-Gbps Limiting Transimpedance Amplifier

ONET8551T
www.ti.com
SLLSEI5 – OCTOBER 2013
11.3-Gbps Limiting Transimpedance Amplifier With RSSI
Check for Samples: ONET8551T
FEATURES
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• 9-GHz Bandwidth
• 10-kΩ Differential Small Signal
Transimpedance
• –20-dBm Sensitivity
• 0.9-μA_RMS Input Referred Noise
• 2.5-mA_p-p Input Overload Current
• Received Signal Strength Indication (RSSI)
• 92-mW Typical Power Dissipation
• CML Data Outputs With On-Chip 50-Ω Back-
Termination
• On Chip Supply Filter Capacitor
• Single +3.3-V Supply
• Die Size: 870 μm x 1036 μm
APPLICATIONS
• 10-G Ethernet
• 8-G and 10-G Fibre Channel
• 10-G EPON
• SONET OC-192
• 6-G and 10-G CPRI and OBSAI
• PIN and APD Preamplifier-Receivers
DESCRIPTION
The ONET8551T device is a high-speed, high-gain,
limiting transimpedance amplifier used in optical
receivers with data rates up to 11.3 Gbps. It features
low-input referred noise, 9-GHz bandwidth, 10-kΩ
small signal transimpedance, and a received signal
strength indicator (RSSI).
The ONET8551T device is available in die form,
includes an on-chip VCC bypass capacitor, and is
optimized for packaging in a TO can.
The ONET8551T device requires a single +3.3-V
supply. The power-efficient design typically dissipates
less than 95 mW. The device is characterized for
operation from –40°C to 100°C case (IC back-side)
temperature.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated