LM3450 Datasheet, PDF (5/40 Pages) National Semiconductor (TI) – LED Driver with Active Power Factor Correction and Phase Dimming Decoder

LM3450
www.ti.com
SNVS681D – NOVEMBER 2010 – REVISED MAY 2013
ELECTRICAL CHARACTERISTICS⁽¹⁾ (continued)
Unless otherwise specified V_CC = 14V. Specifications in standard type face are for T_J = 25°C and those with boldface type
apply over the full Operating Temperature Range ( T_J = −40°C to +125°C). Typical values represent the most likely
parametric norm at T_A = T_J = +25°C, and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min ⁽²⁾
Typ ⁽³⁾
Max ⁽²⁾
Units
PWM Comparator Input Bias Current
20
nA
V_LIM
CS Current Limit Threshold
CS Delay to Output
1.40
1.50
1.60
V
100
ns
CS Blanking Sinking Impedance
1
kΩ
t_LEB
Leading Edge Blanking (LEB) Time
ANALOG ADJUST INPUT (V_ADJ)
V_ADJ-LP
V_ADJ Low Threshold (Low Power Mode)
V_ADJ Low Hysteresis
V_ADJ Pull-up Current Source
V_ADJ Open Voltage
DYNAMIC HOLD CIRCUIT (HOLD, I_SEN)
R_DSON-HD HOLD MosFET On-Resistance
V_SEN-REF
I_SEN Reference Voltage
I_SEN Bias Current
PRE-REGULATOR GATE DRIVE OUTPUT (BIAS)
V_ADJ Falling
V_ADJ Open
ISEN Short to GND
140
ns
56
75
mV
50
1
µA
3
V
22
30
42
Ω
162
200
232
mV
5
µA
V_BIAS
BIAS High Voltage @ 100µA
BIAS Low Voltage @ 100µA
GATE DRIVER OUTPUT (GATE)
V_CC < V_CC-FALL
V_CC > V_CC-RISE
18.8
21
22.6
V
13.5
14
14.5
V_GATE-H
GATE Voltage High
GATE Pull Down Resistance
GATE Peak Current
I_GATE = 20mA
I_GATE = 200mA
11.5
V
10.5
2
8
Ω
(4)_±1.5
A
REFERENCE VOLTAGE OUTPUT (V_REF)
V_REF
Reference Voltage
Current Limit
No Load
2.85
3
3.15
V
1.5
2.0
3.0
mA
DIMMING OUTPUT (DIM, FLT1, FLT2)
FLT1 Output Impedance
Standby Mode
Transition mode
500
kΩ
1.6
Triangle Waveform Compared to FLT2 High
1.49
V
Low
15
mV
f_DIM
DIM Frequency
OFF-TIMERS
180
460
700
Hz
t_OFF-MAX
Maximum Off-Time (Normal Operation)
t_OFF-LP
Off-Time (Low Power Mode)
THERMAL SHUTDOWN
Thermal Limit Threshold
(4)
Thermal Limit Hysteresis
340
µs
42
160
°C
20
THERMAL RESISTANCE
θ_JA
Junction to Ambient
θ_JC
Junction to Case
TSSOP-16 ^{(4) (5)}
38.0
°C/W
10.0
(4) These electrical parameters are specified by design, and are not verified by test.
(5) Junction-to-ambient thermal resistance is highly board-layout dependent. In applications where high maximum power dissipation exists,
namely driving a large MOSFET at high switching frequency from a high input voltage, special care must be paid to thermal dissipation
issues during board design. In high-power dissipation applications, the maximum ambient temperature may have to be derated.
Maximum ambient temperature (T_A-MAX) is dependent on the maximum operating junction temperature (T_J-MAX-OP = 125°C for Q1, or
150°C for Q0), the maximum power dissipation of the device in the application (P_D-MAX), and the junction-to ambient thermal resistance
of the package in the application (θ_JA), as given by the following equation: T_A-MAX = T_J-MAX-OP – (θ_JA × P_D-MAX).
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