DS96F173M_13 Datasheet, PDF (5/12 Pages) Texas Instruments – DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers

DS96F173M/DS96F175C/DS96F175M
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Switching Characteristics
V_CC = 5.0V, T_A = 25°C
Symbol
Parameter
t_PLH
Propagation Delay Time, Low to High Level
Output
t_PHL
t_ZH
t_ZL
t_HZ
t_LZ
|t_PLH–t_PHL|
Propagation Delay Time, High to Low Level
Output
Output Enable Time to High Level
Output Enable Time to Low Level
Output Disable Time from High Level
Output Disable Time from Low Level
Pulse Width Distortion (SKEW)
SNOSC40F – JULY 2000 – REVISED APRIL 2013
Conditions
V_ID = −2.5V to +2.5V,
C_L = 15 pF, See Figure 7
V_CM = 0V
C_L = 15 pF, See Figure 8
C_L = 15 pF, See Figure 9
C_L = 5.0 pF, See Figure 8
C_L = 5.0 pF, See Figure 9
See Figure 7
Min
Typ
Max
Units
5.0
15
22
ns
5.0
15
22
ns
12
16
ns
13
18
ns
14
20
ns
14
18
ns
1.0
3.0
ns
Absolute Maximum Ratings
MIL-STD-883C ⁽¹⁾⁽²⁾
Storage Temperature Range (T_STG)
Lead Temperature (Soldering, 60 sec.)
Max. Package Power Dissipation ⁽³⁾ at 25°C
Ceramic CDIP (NFE)
Ceramic CLGA (NAD)
Ceramic LCCC (NAJ)
Supply Voltage
Input Voltage, A or B Inputs
Differential Input Voltage
Enable Input Voltage
Low Level Output Current
−65°C to +175°C
300°C
1500 mW
1034 mW
1500 mW
7.0V
±25V
±25V
7.0V
50 mA
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the devices should be operated at these limits. The tables of Electrical Characteristics provide conditions for actual device operation.
(2) For complete Military Specifications, refer to the appropriate SMD or MDS.
(3) Above T_A = 25°C derate NFE package 10 mW/°C, NAD package 6.90 mW/°C, NAJ package 11.11 mW/°C.
Recommended Operating Conditions
Supply Voltage (V_CC) DS96F173M/DS96F175M
Common Mode Input Voltage (V_CM)
Differential Input Voltage (V_ID)
Output Current HIGH (I_OH)
Output Current LOW (I_OL)
Operating Temperature (T_A) DS96F173M/DS96F175M
Min
Typ
Max
Units
4.50
5.0
5.50
V
−7
+12
V
|12|
V
−400
μA
11
mA
−55
25
125
°C
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