DRV8839_16 Datasheet, PDF (5/25 Pages) Texas Instruments – Low-Voltage Dual H-Bridge Driver IC

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6.5 Electrical Characteristics
T_A = 25°C, V_M = 5 V, V_CC = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLY
No PWM
I_VM
VM operating supply current
50 kHz PWM
I_VMQ
I_VCC
VM sleep mode supply current
VCC operating supply current
nSLEEP = 0 V
No PWM
50 kHz PWM
I_VCCQ
V_UVLO
VCC sleep mode supply current
VCC undervoltage lockout
voltage
LOGIC-LEVEL INPUTS
nSLEEP = 0 V
V_CC rising
V_CC falling
V_IL
Input low voltage
V_IH
Input high voltage
V_HYS
Input hysteresis
I_IL
Input low current
I_IH
Input high current
R_PD
Pulldown resistance
H-BRIDGE FETS
V_IN = 0
V_IN = 3.3 V
R_DS(ON) HS + LS FET on resistance
I_OFF
OFF-state leakage current
PROTECTION CIRCUITS
I _O = 800 mA, T_J = 25°C
I_OCP
t_OCR
t_DEAD
t_TSD
Overcurrent protection trip level
Overcurrent protection retry time
Output dead time
Thermal shutdown temperature
Die temperature
6.6 Timing Requirements ⁽¹⁾
T_A = 25°C, V_M = 5 V, V_CC = 3 V, R_L = 20 Ω
1
t₁
2
t₂
3
t₃
4
t₄
5
t₅
6
t₆
Output enable time
Output disable time
Delay time, INx high to OUTx high
Delay time, INx low to OUTx low
Output rise time
Output fall time
(1) Not production tested – ensured by design
DRV8839
SLVSBN4B – JANUARY 2013 – REVISED DECEMBER 2015
MIN
TYP
MAX UNIT
40
100
µA
0.8
1.5 mA
30
95
nA
300
500
µA
0.7
1.5 mA
5
25
nA
1.8
V
1.7
0.31 × V_CC 0.34 × V_CC
V
0.39 × V_CC 0.43 × V_CC
V
0.08 × V_CC
V
–5
5
μA
50
μA
100
kΩ
280
330 mΩ
±200
nA
1.9
3.5
A
1
ms
100
ns
150
160
180
°C
MIN
MAX UNIT
120
ns
120
ns
120
ns
120
ns
50
150
ns
50
150
ns
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