DRV8839_16 Datasheet, PDF (15/25 Pages) Texas Instruments – Low-Voltage Dual H-Bridge Driver IC

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10 Layout
DRV8839
SLVSBN4B – JANUARY 2013 – REVISED DECEMBER 2015
10.1 Layout Guidelines
The VCC pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 0.1-μF rated for VCC. This capacitor should be placed as close to the VCC pin as possible with a thick trace
or ground plane connection to the device GND pin.
The VCC pin must be bypassed to ground using an appropriate bulk capacitor. This component may be an
electrolytic and should be located close to the DRV8839.
10.2 Layout Example
10 µF
VM
VM
OUT1
OUT2
GND
GND
VCC
nSLEEP
IN1
EN1
IN2
EN2
2.2 µF
Figure 13. Layout Recommendation
10.3 Thermal Considerations
The DRV8839 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately
150°C, the device disables until the temperature drops to a safe level.
Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation,
insufficient heatsinking, or too high an ambient temperature.
10.3.1 Power Dissipation
The power dissipation of the DRV8839 is a function of RMS motor current and the each output’s FET resistance
(R_DS(ON)) as seen in Equation 1:
Power ≈ I_RMS² × (High-Side R_DS(ON) + Low-Side R_DS(ON)
(1)
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