DRV8803_16 Datasheet, PDF (5/26 Pages) Texas Instruments – Quad Low-Side Driver IC

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6.5 Electrical Characteristics
T_A = 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES
I_VM
V_UVLO
VM operating supply current
VM undervoltage lockout
voltage
V_M = 24 V
V_M rising
LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS)
V_IL
Input low voltage
V_IH
Input high voltage
V_HYS
Input hysteresis
I_IL
Input low current
VIN = 0
I_IH
Input high current
VIN = 3.3 V
R_PD
Pulldown resistance
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
V_OL
Output low voltage
I_OH
Output high leakage current
LOW-SIDE FETS
I_O = 5 mA
V_O = 3.3 V
R_DS(ON) FET on resistance
I_OFF
Off-state leakage current
HIGH-SIDE DIODES
V_M = 24 V, I_O = 700 mA, T_J = 25°C
V_M = 24 V, I_O = 700 mA, T_J = 85°C
V_F
Diode forward voltage
I_OFF
Off-state leakage current
OUTPUTS
V_M = 24 V, I_O = 700 mA, T_J = 25°C
V_M = 24 V, T_J = 25°C
t_R
Rise time
t_F
Fall time
PROTECTION CIRCUITS
V_M = 24 V, I_O = 700 mA, Resistive load
V_M = 24 V, I_O = 700 mA, Resistive load
I_OCP
Overcurrent protection trip level
t_OCP
Overcurrent protection deglitch
time
t_RETRY
t_TSD
Overcurrent protection retry
time
Thermal shutdown temperature Die temperature⁽¹⁾
(1) Not production tested.
DRV8803
SLVSAW5C – JULY 2011 – REVISED NOVEMBER 2015
MIN TYP MAX UNIT
1.6
2.1 mA
8.2 V
0.6
2
0.45
–20
100
0.7 V
V
V
20 μA
100 μA
kΩ
0.5 V
1 μA
0.5
0.75
–50
Ω
0.8
50 μA
1.2
–50
V
50 μA
50
300 ns
50
300 ns
2.3
3.8 A
3.5
µs
1.2
ms
150
160
180 °C
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